ALD Theory

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ALD Theory

We are developing state-of-the-art semiconductor ALD (Atomic Layer Deposition) / CVD (Chemical Vapor Deposition) materials. We are seeking to connect with Japan's ADEKA CORPORATION, and carry out development in cooperation with our customers.

Plasma Enhanced ALD

Enable to low temperature process and high throughput due to increase reactivity of precursor

・Plasma: Ionized gas, radicals

- Radicals: Atomic or molecular species with unpaired electrons

⇒ high reactivity

⇒ low temperature process

ALD (Atomic Layer Deposition)

ALD Precursor = 'Metal X Ligand' is a method of adding organic substances to metal to give volatility, and depositing particles formed by chemical reactions between gases on the surface of the substrate. Because it is non-toxic, environmentally friendly and has excellent variability, it is easy to synthesize and handle, so it is mainly used when making products for film and substrate materials.

Principle and Process of ALD (Atomic Layer Deposition)

It is a process that repeats the supply and removal of precursors and the supply and removal of the raw material gas several times, and functions as a surface reaction and self-limiting.

* AB(g) + CD(g) →AC(s) + BD(g, by-product), Self-limiting, Surface reaction

* Repeat N times, One or more precursor/reactant gas